apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 1 m du 04n010 C single n - channel trench mosfet 4 0v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 4 0 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silicon limited) i d 241.5 a t c = 100 o c 152.7 t c = 25 o c (package limited) 100.0 t a =25 o c ( 3 ) 39.0 (3) pulsed drain current i dm 400.0 power dissipation t c =25 o c p d 96.2 w t c =100 o c 38.5 t a =25 o c ( 3 ) 2.5 (3) single pulse avalanche energy (2) e as 450 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 50 o c/w thermal resistance, junction - to - case r jc 1.3 mdu 04n010 single n - channel trench mosfet 4 0v, 100 a, 1. 0 m features ? v ds = 4 0v ? i d = 1 00 a @v gs = 10v ? r ds(on) < 1.0 m @v gs = 10v ? 100% uil tested ? 100% rg tested general description the mdu 04n010 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . mdu 04n010 is suitable device for synchronous rectification f or server and general purpose applications . s s s g g s s s d d d d d d d d pdfn 56 d g s
apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 2 m du 04n010 C single n - channel trench mosfet 4 0v ordering information part number temp. range package packing ro hs status mdu 04n010v rh - 55~150 o c p dfn56 tape & reel halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 4 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 0 - 2 .0 drain cut - off current i dss v ds = 32 v, v gs = 0v - - 1.0 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 50 a - 0.8 1.0 m ? forward transconductance g fs v ds = 10 v, i d = 50 a - 185 - s dynamic characteristics total gate charge q g( 10.0 v) v ds = 20 v, i d = 50 a, v gs = 10v - 103.5 - nc gate - source charge q gs - 1 8.5 - gate - drain charge q gd - 1 3.7 - input capacitance c iss v ds = 20 v, v gs = 0v, f = 1.0mhz - 6,8 92 . 7 - pf reverse transfer capacitance c rss - 14 7 . 2 - output capacitance c oss - 2 , 0 58 . 7 - turn - on delay time t d(on) v gs = 10v, v ds = 20 v, i d = 50 a , r g = 3.0 - 21 . 8 - ns rise time t r - 18.8 - turn - off delay time t d(off) - 96.3 - fall time t f - 44.1 - gate resistance rg f=1 .0 mhz - 1. 0 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 50 a, v gs = 0v - 0. 80 1.2 0 v body diode reverse recovery time t rr i f = 50 a, dl/dt = 100a/s - 57.7 - ns body diode reverse recovery charge q rr - 105.4 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7). continuous current at t c =25 is silicon limited 2. e as is tested at starting tj = 25 , l = 1 . 0 mh, i as = 30 .0 a, v gs = 10v . 3. t < 10sec.
apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 3 m du 04n010 C single n - channel trench mosfet 4 0v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 70 80 90 100 4.5v 6.0v v gs = 2.5v 10v 3.0v i d , drain current [a] v ds , drain-source voltage [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 50.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 notes : i d = 50.0a t j = 2 5 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 t j = 2 5 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 10 20 30 40 50 60 70 80 90 100 0.7 0.8 0.9 1.0 1.1 1.2 v gs = 10v drain-source on-resistance [m ? ] i d , drain current [a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 notes : v ds = 10v t j = 2 5 i d , drain current [a] v gs , gate to source volatge [v]
apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 4 m du 04n010 C single n - channel trench mosfet 4 0v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 220 240 260 i d , drain current [a] t c , c a s e t e m p e r a t u r e [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 70 80 90 100 110 0 2 4 6 8 10 v ds = 20v note : i d = 50a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 100 ms 100 us 1s 1 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c = 2 5 i d , drain current [a] v ds , drain-source voltage [v]
apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 5 m du 04n010 C single n - channel trench mosfet 4 0v package dimension p dfn56 (5x6mm) d imensions are in millimeters, unless otherwise spec ified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 - 4.22 e 5.90 6.30 e1 5.50 6.10 e2 - 4.30 e 1.27bsc h 0.41 0.71 k 0.20 - l 0.51 0.71 0 12
apr . 20 1 6 . rev. 1.0 magnachip semiconductor ltd . 6 m du 04n010 C single n - channel trench mosfet 4 0v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircra ft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider respons ibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered tradema rk of magnachip semiconductor ltd.
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